Lithographie performance of 193 nm single and bi-layer materials

Journal of Photopolymer Science and Technology

Volumn 11, Issue 3, 1998, Pages 513-524

  Goethals, A M ^a   Poliers, I ^b   Van Roey, F ^c   Sugihara, T ^a   Ronsc, K ^a   Van Driessche, V ^b   Tzviatkov, P ^c   Medina, A ^d   Gabor, A ^b   Biakeney, A ^c   Steinhausler, T ^a   Biafore, J ^b   Slater, S ^d   Nalamasu, O ^a,b   Houlihan, F ^a,d   Komctani, J ^a,b   Timko, A ^a,c,d   Cirelli, R ^a,b,d  

^a IMEC   (Belgium)

^b OMM   (Belgium)

^c OMM   (United States)

^d NOKIA RESEARCH CENTER   (United States)

Author keywords

193 nm; Bi layer; Dry development; Single layer

Indexed keywords

EID: 0000614737     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.11.513     Document Type: Article

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