Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants: Problems and solutions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 298-301

  Van Berkum, J G M ^a   Collart, E J H ^a   Weemers, K ^a   Gravesteijn, D J ^a   Iltgen, K ^b   Benninghoven, A ^b   Niehuis, E ^c  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c ION TOF GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000025744     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589798     Document Type: Article

References (6)

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2. K. Iltgen, C. Bendel, A. Benninghoven, and E. Niehuis, Paper presented at 43rd AVS National Symposium, October 14-18, 1996, Philadelphia PA (unpublished).
3. R. G. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry (Wiley, New York, 1989), p. 2.4.1.
4. G. Stingeder, Anal. Chem. 60, 1524 (1988).
5. J. B. Clegg, N. S. Smith, M. G. Dowsett, M. J. J. Theunissen, and W. B. de Boer, J. Vac. Sci. Technol. A 14, 2645 (1996).
6. E. J. H. Collart, K. Weemers, D. J. Gravesteijn, J. G. M. van Berkum, and N. E. B. Cowern, Paper presented at MRS Spring Meeting, March 31-April 4, San Francisco CA 1997 (unpublished).