Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 264-267

  Hongo, Chie ^a   Tomita, M ^a   Takenaka, M ^a   Murakoshi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Backside SIMS; Knock on effect; Surface transient; Ultra shallow doping

Indexed keywords

DOPING (ADDITIVES); SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; ULSI CIRCUITS;

SURFACE TRANSIENTS;

ION IMPLANTATION;

EID: 12244283052     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00876-0     Document Type: Conference Paper

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