On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1370-1377

  Shi, Yun ^a   Niu, Guofu ^a   Cressler, John D ^b   Harame, David L ^c  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Band gap narrowing (BGN); Device simulation; SiGe HBT

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ENERGY GAP; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

BOLTZMANN STATISTICS; FERMI-DIRAC STATISTICS; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0043175169     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813237     Document Type: Article

References (25)

1. J. W. Slotbloom, "The pn-product in silicon," Solid-State Electron., vol. 20, pp. 279-283, 1977.
2. D. B. M. Klaassen, J. W. Slotbloom, and H. C. De Graaff, "Unified apparent bandgap narrowing in n- and p-type silicon," Solid-State Electron., vol .35, pp. 125-129, 1992.
3. J. del Alamo, S. Swirhun, and R. M. Swanson, "Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon," in IEDM Tech. Dig., 1985, pp. 290-293.
4. H. S. Bennett and C. L. Wilson, "Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements," J. Appl. Phys., vol. 55, pp. 3582-3587, 1984.
5. L. C. M. van den Oever, L. K. Nanver, and J. W. Slotbloom, "Design of 200 GHz SiGe HBTs," in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 2001, pp. 78-81.
6. G. Niu, J. D. Cressler, and A. J. Joseph, "Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBTs," IEEE Trans. Electron Devices, vol. 45, pp. 2499-2504, Dec. 1998.
7. MEDICI User's Manual, 2001.4.0 ed., Avant! Fremont, CA, 2001.
8. DESSIS User's Manual, 7.0.6 ed., ISE Integrated System Engineering AG, Zurich, Switzerland, 2001.
9. ATLAS User's Manual, 5.0.5.R ed., ed., SILVCO Int., Santa Clara, CA, 2000.
10. J. Eberhardt and E. Kasper, "Modeling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times," Solid-State Electron., vol. 45, pp. 2097-2100, 2001.
11. G. F. Niu and J. D. Cressler, "The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's," Solid-State Electron., vol. 43, pp. 2225-2230, 1999.
12. 1-x strained layers," Solid-State Electron., vol. 34, pp. 453-465, 1991.
13. J. M. lópez-González, "The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBTs," IEEE Trans. Electron Devices, vol. 44, pp. 1046-1051, 1997.
14. max SiGe HBTs with heavily doped base formed by HCI-free selective epitaxy," in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 2002, pp. 139-142.
15. T SiGe HBT with a non-self-aligned structure," IEEE Electron Device Letters, vol. 22, pp. 542-544, 2001.
16. A. Gruhle, "Prospects for 200 GHz on silicon with SiGe heterojunction bipolar transistors," in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 2001, pp. 19-25.
17. J. Böck, H. Schäfer, H. Knapp, D. Zöschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, and T. F. Meister, "High-speed SiGe:C bipolar technology," in IEDM Tech. Dig., 2001, pp. 344-347.
18. M. Racanelli, K. Schuegraf, A. Kalburge, A. Kar-Roy, B. Shen, C. Hu, D. Chapek, D. Howard, D. Quon, F. Wang, G. U'ren , L. Lao, H. Tu, J. Zheng, K. Bell, K. Yin, P. Joshi, S. Akhtar, S. Vo, T. Lee, W. Shi, and P. Kempf, "Ultra high speed SiGe npn for advanced BiCMOS technology," in IEDM Tech. Dig., 2001, pp. 336-339.
19. S. Wilms and H. M. Rein, "Analytical high-durrent model for the transit time of SiGe HBTs," in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 1998, pp. 199-202.
20. D. B. M. Klaassen, "A unified mobility model for device simulation - I. Model equations and concentration dependence," Solid-State Electron., vol. 35, pp. 953-959, 1992.
21. C. M. Van Vliet, "Bandgap narrowing and emitter efficiency in heavily doped emitter structure revisited," IEEE Trans. Electron Devices, vol. 40, pp. 1140-1147, 1993.
22. x/Si HBTs with heavy base doping," IEEE Trans. Electron Devices, vol. 43, pp. 457-466, Mar. 1996.
23. x HBT design," IEEE Trans. Electron Devices, vol. 49, pp. 1242-1249, July 2002.
24. J. J. H. ven den Biesen, "A simple regional analysis of transit times in bipolar transistors," Solid-State Electron., vol. 29, pp. 529-534, 1986.
25. P. A. Basore, PC-1D Version 2.1. Ames, IA: Iowa State Univ. Press, 1989.