The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBT's

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1046-1051

  Lopez Gonzâlez, Juan M ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; NUMERICAL ANALYSIS; SEMICONDUCTOR DOPING;

THERMIONIC EMISSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031176095     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595930     Document Type: Article

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