Design of 200 GHz SiGe HBT's

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2001, Pages 78-81

  Van den Oever, L C M ^a   Nanver, L K ^a   Slotboom, J W ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CODE DIVISION MULTIPLE ACCESS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS;

CUT-OFF FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035167219     PISSN: 10889299     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. The Impact of SiGe BiCMOS technology on microwave circuits and systems
2. Integrated circuit technology options for RF-IC's - Present status and future directions
3. SiGe RF - Electronic: Device, circuits, competitors, markets
4. SiGe and GaAs as competitive technologies for RF-applications
5. Physical limitations on frequency and power parameters of transistors
6. CEO limit on Si bipolar transistors
7. On the optimization of SiGe-Base bipolar transistors
8. max
9. Analysis of the emitter charge storage in SiGe Heterojunction bipolar transistors with a lightly doped emitter
10. Non-local impact ionization in silicon devices