A drift-diffusion/Monte Carlo simulation methodology for Si1-xGex HBT design

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1242-1249

  Palestri, Pierpaolo ^b,c   Mastrapasqua, Marco ^a,b   Pacelli, Andrea ^a,d   King, Clifford A ^a,b  

^a IEEE

^b AGERE SYSTEMS   (United States)

^c UNIVERSITY OF UDINE   (Italy)

^d Stony Brook University   (United States)

Author keywords

Bipolar; Delay analysis; Device simulation; Monte Carlo simulation; SiGe HBT

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DELAY CIRCUITS; DIFFUSION; ELECTRIC BREAKDOWN; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; LUMPED PARAMETER NETWORKS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE STRUCTURES; TWO DIMENSIONAL;

DRIFT DIFFUSION SOLVER; LUMPED CIRCUIT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036638972     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013282     Document Type: Article

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