Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times

Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 2097-2100

  Eberhardt, Jochen ^a   Kasper, Erich ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Bipolar transistor; HBT; Heterojunction; SiGe; Transistor simulation; Transit frequency

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SEMICONDUCTING SILICON COMPOUNDS;

TRANSIT FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035545614     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00211-8     Document Type: Article

References (16)

1. Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBTs
2. Growth of 100 GHz SiGe heterobipolar transistor structures
3. SiGe heterojunction bipolar transistors with 156 GHz transit frequency
4. max
5. Dependence of the cutoff frequency on Ge profiles, base and collector widths in SiGe HBTs
6. T at 77 K
7. High speed SiGe-HBT with very low base sheet resistivity
8. Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction
9. 200 GHz SiGe hetero bipolar transistor design
10. Si/SiGe/Si heterojunction bipolar transistors
11. Unified apparent bandgap narrowing in n- and p-type silicon
12. Device physics analysis of parasitic conduction band barrier formation in SiGe HBTs