Prototype infrared optical sensor and solar cell made of ß-FeSi2 thin film

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5065, Issue , 2003, Pages 188-195

  Wang, Shinan ^a   Otogawa, Naotaka ^a   Fukuzawa, Yasuhiko ^a   Shen, Honglie ^a   Tanoue, Hisao ^a   Kojima, Takeshi ^a   Nakayama, Yasuhiko ^a   Makita, Yunosuke ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

FeSi2 thin film; FeSi2 Si heterojunction; All FeSi2 structure; Diode; Fe Si interdiffusion; Optical sensor; RBS; RDE; Series resistance; Solar cell

Indexed keywords

HETEROJUNCTIONS; ION IMPLANTATION; IRON COMPOUNDS; OPTICAL SENSORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SOLAR CELLS;

REACTIVE DEPOSITION EPITAXY (RDE);

THIN FILMS;

EID: 0043169383     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.502278     Document Type: Conference Paper

References (28)

1. 2ß," Acta Cryst. B27, pp. 1209-1218, 1971.
2. M. C. Bost and J. E. Mahan, "Optical properties of semiconducting iron disilicide thin films," J. Appl. Phys. 58, pp. 2696-2703, 1985.
3. M. C. Bost and J. E. Mahan, "Summary abstract: semiconducting silicides as potential materials for electro-optic very large scale integrated circuit interconnects," J. Vac. Sci. Technol. B4, pp. 1336-1338, 1986.
4. H. Lange, "Electronic Properties of Semiconducting Suicides," Phys. Star. Sol (b) 201, pp. 3-65, 1997.
5. D. Leong, M. Harry, K. J. Reeson and K. P. Homewood, "A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm," Nature 387, pp. 686-688, 1997.
6. 2 active region," Jpn. J. Appl. Phys. 39, pp. L1013-L1015, 2000.
7. P. Muret, I. Ali and M. Brunel, "Semiconducting iron silicide thin films on silicon (111) with large Hall mobility and low residual electron concentration," Semicond. Sci. Technol. 13, pp. 1170-1179, 1998.
8. 2 films prepared by magnetron-sputtering deposition", Jpn. J. Appl. Phys. 41 (Part 2, No. 3B), pp. L299-L301, 2002.
9. Y. Makita, "Materials Availability for thin film solar cells," Future Generation Photovoltaic Technologies: First NREL Conference, edited by McConnell, AIR, New York, pp. 3-10, 1997.
10. + ions into Si," J. Appl. Phys. 80, pp. 5955-5962, 1996.
11. 5 on Si (100) by ion beam synthesis," Jpn. J. Appl. Phys. 36 (Part 1, No. 5A), 2802-2812, 1997.
12. 2," Appl. Surf. Sci. 65/66, pp. 482-488, 1993.
13. 2 on silicon: Optical threshold as a function of temperature," J. Appl. Phys. 74, pp. 1138-1142, 1993.
14. 2 preparation method," Proc. 13th European Photovoltaic Solar Energy Conf., Nice, France, pp. 1326-1329, 1995.
15. 2/InP heterojunction prepared by RF-sputtering deposition," Jpn. J. Appl. Phys. 38 (Part 1, No. 2A), pp. 781-786, 1999.
16. 2/Si heterojunctions," Thin Solid Films 381, pp. 256-261, 2001.
17. 2/Si heterojunctions," Thin Solid Films 381, pp. 256-261, 2001.
18. K. P. Homewood, K. J. Reeson, R. M. Gwilliam, A. K. Kewell, M. A. Loureno, G. Shao, Y. L. Chen, J. S. Sharpe, C. N. McKinty and T. Bulter, "Ion beam synthesized suicides: Growth, characterization and devices," Thin Solid Films 381, pp. 188-193, 2001.
19. Z. X. Liu, M. Watanabe and M. Hanabusa, "Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition," Thin Solid Films 381, pp. 262-266, 2001.
20. 2 light emitting devices," Nuclear Instruments and Methods in Physics Research B175-177, pp. 159-163, 2001.
21. 2 films by reactive deposition epitaxy", Materials Research Soc. Symposium Proc. (in press), 2001.
22. 2)," Surf. Sci. 462, pp. 143-150, 2000.
23. 2 with lattice distortions corresponding to the epitaxial relationships on Si (111),"Phys. Rev. B62, pp. 11063-11070, 2000.
24. 2," Thin Solid Films 381, pp. 171-175, 2001.
25. 2 single crystals," Jpn. J. Appl. Phys. 40 (Part 1, No. 6A), pp. 4164-4165, 2001; private communications.
26. 2 capping and templates," Jpn. J. Appl. Phys. 38 (Part 2, No. 8A), pp. L878-881, 1999.
27. 2 films grown from Si/Fe multilayers by change of Si/Fe ratios," Jpn. J. Appl. Phys. 39 (Part 2, No. 8A), pp. L789-791, 2000.
28. 2 by laser annealing," Proc. 49th Spring Meeting of the Japan Society of Applied Physics and Related Societies (in Japanese), Tokai University, Japan, 30a-P11-20, p. 1369, 2002.