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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2802-2812

Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis

(6) Katsumata, Hiroshi a,b Makita, Yunosuke a Kobayashi, Naoto a Shibata, Hajime a Hasegawa, Masataka a Uekusa, Shin Ichiro b

a ELECTROTECHNICAL LABORATORY (Japan)

b MEIJI UNIVERSITY (Japan)

Author keywords

Ion beam synthesis; Optical absorption; Photoluminescence; Raman scattering; Rutherford backscattering spectrometry; Two step annealing; X ray diffraction; FeSi2

Indexed keywords

ION BEAM SYNTHESIS; MULTISTEP ANNEALING;

ANNEALING; ENERGY GAP; GRAIN BOUNDARIES; ION BEAMS; IRON COMPOUNDS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SILICON WAFERS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031146356 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.2802 Document Type: Article

Times cited : (32)

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