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Volumn 381, Issue 2, 2001, Pages 171-175
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Electronic structure and interband optical properties of β-FeSi2
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRONIC STRUCTURE;
ENERGY GAP;
EPITAXIAL GROWTH;
EXCITONS;
PARAMETER ESTIMATION;
SEMICONDUCTING SILICON COMPOUNDS;
SENSITIVITY ANALYSIS;
EPITAXIAL LAYERS;
EXCITONIC STRUCTURES;
SEMICONDUCTING FILMS;
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EID: 0035155627
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)01739-9 Document Type: Article |
Times cited : (20)
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References (20)
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