Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 159-163

  Lourenco M A ^a   Butler, T M ^a   Kewell, A K ^a   Gwilliam, R M ^a   Kirkby, K J ^a   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Band offset; Deep level transient spectroscopy; Electroluminescence; Iron disilicide; Light emitting device

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROLUMINESCENCE; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; IRON COMPOUNDS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL);

ION BEAM SYNTHESIS (IBS); IRON DISILICIDE;

LIGHT EMITTING DIODES;

EID: 17044451223     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00663-7     Document Type: Conference Paper

References (8)