Proton irradiation effects on standard and oxygenated silicon diodes

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 477-482

  Bisello, D ^a   Bacchetta, N ^a   Candelori, A ^a   Kaminski, A ^a   Pantano, D ^a   Rando, R ^a   Stavitski, I ^a   Wyss, J ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

Interactions of particles; Radiation effects on semiconductors; Radiation with matter; Semiconductor detectors

Indexed keywords

HARDENING; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SUBSTRATES;

SILICON DIODES; SILICON MICROSTRIP DETECTORS;

SEMICONDUCTOR DIODES;

EID: 0036131445     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (13)

1. Relation between microscopic defects and macroscopic changes in silicon detectors properties after hadron irradiation
2. The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation