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Thin Solid Films

Volumn 412, Issue 1-2, 2002, Pages 38-43

Polarity selection process and polarity manipulation of GaN in MOVPE and RF-MBE growth

(2) Yoshikawa, A a Xu, K a

a CHIBA UNIVERSITY (Japan)

Author keywords

GaN; Metalorganic vapor phase epitaxy; Molecular beam epitaxy; Polarity

Indexed keywords

HIGH TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDING; STOICHIOMETRY; SUBSTRATES; VAPOR DEPOSITION;

POLARITY SELECTION;

GALLIUM NITRIDE;

EID: 0037013499 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00310-3 Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.