Substrate temperature effects on surface reactivity of SiFx (x = 1, 2) radicals in fluorosilane plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1024-1032

  Williams, K L ^a   Fisher, E R ^a  

^a Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; FREE RADICALS; INTERFACES (MATERIALS); SILICON COMPOUNDS; SUBSTRATES; TEMPERATURE; THERMAL EFFECTS;

FLUORINATED SILICON GASES; FLUOROSILANE PLASMAS; ROTATIONAL TEMPERATURE;

PLASMAS;

EID: 0042736012     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1582863     Document Type: Article

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