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Volumn 36, Issue 11, 1997, Pages 6922-6926
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A chemical dry etching of Si and SiO2 substrates by F atoms in a discharge flow
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Author keywords
Discharge flow; Dry etching; Emission spectrum; F; Microwave discharge; Si; SiO2
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Indexed keywords
ARGON;
ELECTRIC DISCHARGES;
EMISSION SPECTROSCOPY;
FLOW OF FLUIDS;
FLUORINE COMPOUNDS;
MICROWAVES;
PLASMA ETCHING;
SILICA;
SILICON WAFERS;
SUBSTRATES;
DISCHARGE FLOW;
MICROWAVE DISCHARGES;
DRY ETCHING;
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EID: 0031274460
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.6922 Document Type: Article |
Times cited : (5)
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References (18)
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