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Volumn 36, Issue 11, 1997, Pages 6922-6926

A chemical dry etching of Si and SiO2 substrates by F atoms in a discharge flow

Author keywords

Discharge flow; Dry etching; Emission spectrum; F; Microwave discharge; Si; SiO2

Indexed keywords

ARGON; ELECTRIC DISCHARGES; EMISSION SPECTROSCOPY; FLOW OF FLUIDS; FLUORINE COMPOUNDS; MICROWAVES; PLASMA ETCHING; SILICA; SILICON WAFERS; SUBSTRATES;

EID: 0031274460     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6922     Document Type: Article
Times cited : (5)

References (18)
  • 8
    • 0003292910 scopus 로고
    • Molecular Spectra and Molecular Structure
    • Van Nostrand Reinhold, New York
    • K. P. Huber and G. Herzberg: Molecular Spectra and Molecular Structure (Van Nostrand Reinhold, New York, 1979) Constants of Diatomic Molecules, Vol. IV.
    • (1979) Constants of Diatomic Molecules , vol.4
    • Huber, K.P.1    Herzberg, G.2
  • 9
    • 0000559404 scopus 로고
    • ed. J. M. Farrar and W. H. Saunders, Jr. John Wiley & Sons, New York, Chap. 9
    • M.Tsuji: Techniques of Chemistry, ed. J. M. Farrar and W. H. Saunders, Jr. (John Wiley & Sons, New York, 1988) Vol. 20, Chap. 9, p. 489.
    • (1988) Techniques of Chemistry , vol.20 , pp. 489
    • Tsuji, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.