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Volumn 406, Issue , 1996, Pages 33-38
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Monitoring of direct reactions during etching of silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC BEAMS;
DESORPTION;
ETCHING;
FLUORINE;
MASS SPECTROMETERS;
MONITORING;
SCATTERING;
SURFACES;
DIRECT REACTIONS;
HYPERTHERMAL FLUORINE ATOM BEAM;
MAXWELL BOLTZMANN DISTRIBUTION;
QUADRUPOLE MASS SPECTROMETERS;
STEADY STATE ETCHING;
SEMICONDUCTING SILICON;
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EID: 0029777837
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (14)
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