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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1303-1309

Temperature effects on the structure of polycrystalline silicon films by glow-discharge decomposition using SiH4/SiF4

(4) Syed, Moniruzzaman a Inokuma, Takao a Kurata, Yoshihiro a Hasegawa, Seiichi a

a KANAZAWA UNIVERSITY (Japan)

Author keywords

Addition of fluorine; Crystallinity; Deposition temperature; Plasma CVD; Poly Si films; Surface morphology

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; DECOMPOSITION; FILM PREPARATION; FLUORINE COMPOUNDS; GLOW DISCHARGES; GRAIN SIZE AND SHAPE; MATHEMATICAL MODELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRUCTURE (COMPOSITION); TEMPERATURE;

BOND DENSITY; CRYSTALLINE QUALITY; GLOW DISCHARGE DECOMPOSITION; POLYCRYSTALLINE SILICON FILMS; STRUCTURAL PROPERTIES;

SEMICONDUCTING SILICON;

EID: 0032651543 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1303 Document Type: Article

Times cited : (7)

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