Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4-SiH4-H2

Thin Solid Films

Volumn 289, Issue 1-2, 1996, Pages 227-233

  Lim, Hong Joo ^a   Ryu, Bong Yeol ^a   Ryu, Jai Il ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Electrical properties and measurements; Silicon; Structural properties

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; ETCHING; GASES; GRAIN SIZE AND SHAPE; PLASMA APPLICATIONS; SILICON; STRUCTURE (COMPOSITION); TEMPERATURE; THIN FILMS; VOLUME FRACTION;

REMOTE PLASMA CHEMICAL VAPOR DEPOSITION; URBACH ABSORPTION EDGE; URBACH ENERGY;

POLYCRYSTALLINE MATERIALS;

EID: 0030289313     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08875-X     Document Type: Article

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