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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1936-1940

The energy band gap of AlxGa1-xN

(5) Paduano, Qing S a Weyburne, David W a Bouthillette, Lionel O a Wang, Shen Qi a Alexander, Michael N a

a AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

AlxGa1 xN; Bowing parameter; Energy band gap; Residual strain correction; Sapphire substrate

Indexed keywords

BENDING (FORMING); COMPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN MEASUREMENT; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ENERGY BAND GAP; RESIDUAL STRAIN; X RAY DIFFRACTION ROCKING CURVE WIDTHS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036529353 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1936 Document Type: Article

Times cited : (26)

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