Occupation probability for acceptor in Al-implanted p-type 4H-SiC

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2234-2241

  Matsuura, Hideharu ^a   Sugiyama, Koichi ^a   Nishikawa, Kazuhiro ^a   Nagata, Takashi ^a   Fukunaga, Nobuya ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; HALL EFFECT; ION IMPLANTATION; PROBABILITY DISTRIBUTIONS;

HOLE CONCENTRATION;

SILICON CARBIDE;

EID: 0042324647     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589176     Document Type: Article

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35. A are the same as those in Table II.
36. H at high temperatures seem too small.