Simple graphic method for evaluating densities and energy levels of impurities in semiconductor from temperature dependence of majority-carrier concentration

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 5 A, 1996, Pages

  Matsuura, Hideharu ^a   Sonoi, Kazuhide ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; GRAPHIC METHODS; IMPURITIES; MATHEMATICAL MODELS;

BOLTZMANN CONSTANT; IMPURITY DENSITY; IMPURITY LEVEL; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR MATERIALS;

EID: 0030142739     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l555     Document Type: Article

References (5)