Temperature dependence of electron concentration in type-converted silicon by 1 × 1017cm-2 fluence irradiation of 1 MeV electrons

Applied Physics Letters

Volumn 76, Issue 15, 2000, Pages 2092-2094

  Matsuura, Hideharu ^a   Uchida, Yoshitsugu ^b   Nagai, Naoto ^c   Hisamatsu, Tadashi ^d,e   Aburaya, Takashi ^d   Matsuda, Sumio ^d  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b Osaka Branch   (Japan)

^c TORAY RESEARCH CENTER INC   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^e SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001200936     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126265     Document Type: Article

References (20)

1. H. Kitahara, S. Tanaka, Y. Kanamori, and T. Itoh, 46th International Astronautical Congress, Oslo, 1995, p. 1.
2. T. Hisamatsu, O. Kawasaki, S. Matsuda, T. Nakao, and Y. Wakow, Sol. Energy Mater. Sol. Cells 50, 331 (1998).
3. M. Yamaguchi, S. J. Taylor, M. Yang, S. Matsuda, O. Kawasaki, and T. Hisamatsu, Jpn. J. Appl. Phys., Part 1 35, 3918 (1996).
4. S. J. Taylor, M. Yamaguchi, M. Yang, M. Imaizumi, S. Matsuda, O. Kawasaki, and T. Hisamatsu, Appl. Phys. Lett. 70, 2165 (1997).
5. S. J. Taylor, M. Yamaguchi, S. Matsuda, T. Hisamatsu, and O. Kawasaki, J. Appl. Phys. 82, 3239 (1997).
6. T. Yamaguchi, S. J. Taylor, S. Watanabe, K. Ando, M. Yamaguchi, T. Hisamatsu, and S. Matsuda, Appl. Phys. Lett. 72, 1226 (1998).
7. S. J. Taylor, M. Yamaguchi, T. Yamaguchi, S. Watanabe, K. Ando, S. Matsuda, T. Hisamatsu, and S. I. Kim, J. Appl. Phys. 83, 4620 (1998).
8. A. Khan, M. Yamaguchi, S. J. Taylor, T. Hisamatsu, and S. Matsuda, Jpn. J. Appl. Phys., Part 1 38, 2679 (1999).
9. H. Matsuura, Y. Uchida, T. Hisamatsu, and S. Matsuda, Jpn. J. Appl. Phys., Part 1 37, 6034 (1998).
10. H. Amekura, N. Kishimoto, and K. Kono, J. Appl. Phys. 84, 4834 (1998).
11. H. Matsuura and K. Sonoi, Jpn. J. Appl. Phys., Part 2 35, L555 (1996).
12. H. Matsuura, Jpn. J. Appl. Phys., Part 1 36, 3541 (1997).
13. H. Matsuura, T. Kimoto, and H. Matsunami, Jpn. J. Appl. Phys., Part 1 38, 4013 (1999).
14. H. Matsuura, Jpn. J. Appl. Phys., Part 1 38, 5176 (1999).
15. S. C. Baber, Thin Solid Films 72, 201 (1980).
16. N. Nagai, H. Ishida, T. Hisamatsu, T. Aburaya, and S. Matsuda, J. Cryst. Growth (to be published).
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 1.
18. P. Nubile, J. C. Bourgoin, D. Stievenard, D. Deresmes, and G. Strobl, J. Appl. Phys. 72, 2673 (1992).
19. P. M. Mooney, L. J. Cheng, M. Süli, J. D. Gerson, and J. W. Corbett, Phys. Rev. B 15, 3836 (1977).
20. M. W. Hüppi, J. Appl. Phys. 68, 2702 (1990).