The influence of excited states of deep dopants on majority-carrier concentration in a wide-bandgap semiconductor

New Journal of Physics

Volumn 4, Issue , 2002, Pages

  Matsuura, Hideharu ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042608388     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/4/1/312     Document Type: Article

References (25)

1. Yu P Y and Cardona M 1999 Fundamentals of Semiconductors: Physics and Materials Properties 2nd edn (Berlin: Springer) ch 4
2. Sapoval B and Hermann C 1993 Physics of Semiconductors (New York: Springer) p 73 ch 3
3. Singh J 1994 Semiconductor Devices: an Introduction (New York: McGraw-Hill) p 110 ch 3
4. Burstein E, Oberly J J, Davisson J W and Henvis B W 1951 Phys. Rev. 82 764
5. Burstein E, Bell E E and Davisson J W 1953 J. Phys. Chem. 57 849
6. Ikeda M, Matsunami H and Tanaka T 1980 Phys. Rev. B 22 2842
7. Freitas J A Jr 1995 Properties of Silicon Carbide ed G L Harris (London: INSPEC) p 29 ch 2
8. Johnson M A L, Yu Z, Boney C, Hughes W C, Cook J W Jr, Schetzina J F, Zao H, Skromme B J and Edmond J A 1997 MRS Proc. 449 271
9. Morkoç H 1999 Nitride Semiconductors and Devices (Berlin: Springer) p 325 ch 10
10. Smith R A 1978 Semiconductors 2nd edn (Cambridge: Cambridge University Press) p 92 ch 4
11. Ashcroft N W and Mermin N D 1976 Solid State Physics (Philadelphia, PA: Harcourt) p 586 ch 28
12. Sapoval B and Hermann C 1993 Physics of Semiconductors (New York: Springer) p 112 ch 4
13. Yu P Y and Cardona M 1999 Fundamentals of Semiconductors: Physics and Materials Properties 2nd edn (Berlin: Springer) p 160 ch 4
14. Schöner A, Nordell N, Rottner K, Helbig R and Pensl G 1996 Int. Conf. on Silicon Carbide and Related Materials (Kyoto, Japan, 1995) (Inst. Phys. Conf. Ser. vol 142) ed S Nakajima, H Matsunami, S Yoshida and H Harima (Bristol: Institute of Physics Publishing) p 493 ch 3
15. Troffer T, Schadt M, Frank T, Itoh H, Pensl G, Heindl J, Strunk H P and Maier M 1997 Phys. Status Solidi a 162 277
16. Schulze N, Gajowski J, Semmelroth K, Laube M and Pensl G 2001 European Conf. on Silicon Carbide and Related Materials (Kloster-Baz, Germany, 2000) (Materials Science Forum vol 353-6) ed G Pensl, D Stephani and M Hundhausen (Zürich: Trans Tech Publications Ltd) p 45
17. Matsuura H 2001 Int. Conf. on Silicon Carbide and Related Materials (Tsukuba, Japan, 2001) (Zürich: Trans Tech Publications Ltd)
18. Kim D J, Ryu D Y, Bojarczuk N A, Karasinski J, Guha S, Lee S H and Lee J H 2000 J. Appl. Phys. 88 2564
19. Matsuura H and Sonoi K 1996 Japan. J. Appl. Phys. 35 L555
20. Matsuura H, Uchida Y, Hisamatsu T and Matsuda S 1998 Japan. J. Appl. Phys. 37 6034
21. Matsuura H, Kimoto T and Matsunami H 1999 Japan. J. Appl. Phys. 38 4013
22. Matsuura H, Uchida Y, Nagai N, Hisamatsu T Aburaya T and Matsuda M 2000 Appl. Phys. Lett. 76 2092
23. Matsuura H, Masuda Y, Chen Y and Nishino S 2000 Japan. J. Appl. Phys. 39 5069
24. Brennan K F 1999 The Physics of Semiconductors with Applications to Optoelectronic Devices (Cambridge: Cambridge University Press) p 293 ch 5
25. Ashcroft N W and Mermin N D 1976 Solid State Physics (Philadelphia, PA: Harcourt) p 41 ch 2 and p 759 appendix B