Growth of highly aluminum-doped p-type 6H-SiC single crystals by the modified Lely method

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 45-48

  Schulze, Norbert ^a   Gajowski, Jürgen ^a   Semmelroth, Kurt ^a   Laube, Michael ^a   Pensl, Gerhard ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITANCE; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; THERMAL EFFECTS;

CAPACITANCE VOLTAGE CHARACTERISTICS; HALL SCATTERING FACTOR; MODIFIED LELY METHOD; SUBLIMATION PHYSICAL VAPOR TRANSPORT;

SILICON CARBIDE;

EID: 2442435384     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.45     Document Type: Article

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