Influence of excited states of deep acceptors on hole concentrations in SiC

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 679-682

  Matsuura, Hideharu ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

Acceptor level; Excited states; FCCS; Hall effect measurement; P type SiC; Temperature dependence of hole concentration

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); EXCITED STATES; GROUND STATE; HOLE CONCENTRATION; THERMAL EFFECTS; ALUMINUM COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; TEMPERATURE DISTRIBUTION;

ACCEPTOR LEVEL; FCCS; HALL EFFECT MEASUREMENT; P-TYPE SIC; TEMPERATURE DEPENDENCE; ACCEPTOR LEVELS;

SILICON CARBIDE; EXCITED STATES;

EID: 0042592660     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.679     Document Type: Article

References (7)

1. nd edn (Springer, Berlin 1999), ch. 4.
2. M. Ikeda, H. Matsunami and T. Tanaka: Phys. Rev. B22 (1980), p. 2842.
3. R.A. Smith: Semiconductors, 2 edn (Cambridge University Press, Cambridge 1978), ch. 4.
4. N. Schulze, J. Gajowski, K. Semmelroth, M. Laube and G. Pensl: Mater. Sci. Forum Vol. 353-356 (2001), p. 45.
5. H. Matsuura, Y. Masuda, Y. Chen and S. Nishino: Jpn. J. Appl. Phys. 39 (2000), p. 5069.
6. The Windows application for FCCS can be freely downloaded from our web site (http://www.osakac.ac.jp/labs/matsuura/).
7. K.F. Brennan: The Physics of Semiconductors with Applications to Optoelectronic Devices (Cambridge University Press, Cambridge 1999), ch. 5.