Determination of donor densities and donor levels in 3C-SiC grown from Si2(CH3)6 using Hall-effect measurements

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5069-5075

  Matsuura, Hideharu ^a   Masuda, Yasuichi ^b   Chen, Yi ^b   Nishino, Shigehiro ^b  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HALL EFFECT; SILICON CARBIDE;

DONOR DENSITIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034266512     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5069     Document Type: Article

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