메뉴 건너뛰기




Volumn 47, Issue 11, 2003, Pages 1937-1941

A high performance RF LDMOSFET in thin film SOI technology with step drift profile

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; FEEDBACK; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

EID: 0042229238     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00222-3     Document Type: Article
Times cited : (36)

References (18)
  • 2
    • 0035366889 scopus 로고    scopus 로고
    • Radio-frequency performance of a state-of-the-art 0.5 μm-rule thin-film SOI power MOSFET
    • Matsumoto S., Hiraoka Y., Sakai T. Radio-frequency performance of a state-of-the-art 0.5 μm-rule thin-film SOI power MOSFET. IEEE Trans. Electron. Dev. 48(6):2001;51-55.
    • (2001) IEEE Trans Electron Dev , vol.48 , Issue.6 , pp. 51-55
    • Matsumoto, S.1    Hiraoka, Y.2    Sakai, T.3
  • 3
    • 0032272328 scopus 로고    scopus 로고
    • A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications
    • Matsumoto S., Ishiyama T., Hiroaka Y., Sakai T.et al. A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications. IEDM Tech. Dig. 1998;945-948.
    • (1998) IEDM Tech Dig , pp. 945-948
    • Matsumoto, S.1    Ishiyama, T.2    Hiroaka, Y.3    Sakai, T.4
  • 6
    • 0035686462 scopus 로고    scopus 로고
    • A silicon-on-insulator 28-V power LDMOSFET for 1-GHz integrated power amplifier applications
    • McShane E., Shenai K., Leong S.K. A silicon-on-insulator 28-V power LDMOSFET for 1-GHz integrated power amplifier applications. MTT-S. 3:2001;2135-2138.
    • (2001) MTT-S , vol.3 , pp. 2135-2138
    • McShane, E.1    Shenai, K.2    Leong, S.K.3
  • 7
    • 0036538951 scopus 로고    scopus 로고
    • Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon
    • Fiorenza J.G., Alamo J.A. Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon. IEEE Trans. Electron. Dev. 49(4):2002;687-692.
    • (2002) IEEE Trans Electron Dev , vol.49 , Issue.4 , pp. 687-692
    • Fiorenza, J.G.1    Alamo, J.A.2
  • 9
    • 0032123065 scopus 로고    scopus 로고
    • A self-aligned gate GaAs MESFET with P-pocket layers for high-efficiency linear power amplifiers
    • Nishihori K., Kitaura Y., Hirose M., Michara M., Nagaoka M., Uchitomi N. A self-aligned gate GaAs MESFET with P-pocket layers for high-efficiency linear power amplifiers. IEEE Trans. Electron. Dev. 45(7):1998;1385-1392.
    • (1998) IEEE Trans Electron Dev , vol.45 , Issue.7 , pp. 1385-1392
    • Nishihori, K.1    Kitaura, Y.2    Hirose, M.3    Michara, M.4    Nagaoka, M.5    Uchitomi, N.6
  • 10
    • 0036541771 scopus 로고    scopus 로고
    • The design, characterisation, and modeling of RF LDMOSFETs on silicon-on-insulator material
    • McShane E., Shenai K. The design, characterisation, and modeling of RF LDMOSFETs on silicon-on-insulator material. IEEE Trans. Electron. Dev. 49(4):2002;643-651.
    • (2002) IEEE Trans Electron Dev , vol.49 , Issue.4 , pp. 643-651
    • McShane, E.1    Shenai, K.2
  • 12
    • 0033306991 scopus 로고    scopus 로고
    • RF LDMOSFET with extreme low parasitic feedback capacitance and high hot-carrier immunity
    • Xu S.M., Foo P.D., Wen J.Q., Liu Y., Lin F.J., Ren C.H. RF LDMOSFET with extreme low parasitic feedback capacitance and high hot-carrier immunity. IEEE IEDM. 1999;201-204.
    • (1999) IEEE IEDM , pp. 201-204
    • Xu, S.M.1    Foo, P.D.2    Wen, J.Q.3    Liu, Y.4    Lin, F.J.5    Ren, C.H.6
  • 17
    • 0039147383 scopus 로고
    • Analysis of kink characteristics in silicon-on-insulator MOSFET's using two-carrier modelling
    • Kato K., Wada T., Taniguchi K. Analysis of kink characteristics in silicon-on-insulator MOSFET's using two-carrier modelling. IEEE Trans. Electron. Dev. 32(2):1985;458-462.
    • (1985) IEEE Trans Electron Dev , vol.32 , Issue.2 , pp. 458-462
    • Kato, K.1    Wada, T.2    Taniguchi, K.3
  • 18
    • 0003225199 scopus 로고
    • Heat generation in semiconductor devices
    • Lindefelt U. Heat generation in semiconductor devices. Jpn. J. Appl. Phys. 75(2):1994;942-957.
    • (1994) Jpn J Appl Phys , vol.75 , Issue.2 , pp. 942-957
    • Lindefelt, U.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.