A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 2135-2138

  McShane, Erik ^a   Shenai, Krishna ^a   Leong, S K ^a  

^a PolyFET RF Devices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; GAIN MEASUREMENT; MESFET DEVICES; POWER AMPLIFIERS; SILICON ON INSULATOR TECHNOLOGY;

ON-CHIP MATCHING; POWER DENSITY; POWER GAIN;

MOSFET DEVICES;

EID: 0035686462     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967336     Document Type: Article

References (12)

1. A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applications
2. High power-added efficiency MMIC amplifier for 2.4-GHz wireless communications
3. A 3-V GaAs MESFET monolithic transmitter for digital/analog dual-mode hand-held phones
4. A single-chip GaAs RF transceiver for 1.9-GHz digital mobile communication systems
5. RFICs for mobile communications systems using SiGe bipolar technology
6. SiGe power HBTs for low-voltage, high-performance RF applications
7. Performance evaluation of bulk Si and SOI RF LDMOSFETs for emerging RFIC applications
8. High temperature performance of LDMOSFETs used in RFIC applications
9. The design of tetrode transistor amplifiers
10. Modeling and characterization of 80-V LDMOSFET for RF communications
11. Modeling and characterization of an 80-V silicon LDMOSFET for emerging RFIC applications
12. Thermal and package performance limitations in LDMOSFETs for RFIC applications