Novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 945-948

  Matsumoto, Satoshi ^a   Ishiyama, Toshihiko ^a   Hiraoka, Yasushi ^a   Sakai, Tatsuo ^a   Yachi, Toshiaki ^a   Kamitsuna, Hideki ^a   Muraguchi, Masahiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES;

REVERSED SILICON WAFER DIRECT BONDING (RSDB);

MOSFET DEVICES;

EID: 0032272328     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)