Lateral RF SOI power MOSFETs with fT of 6.9 GHz

IEEE Electron Device Letters

Volumn 21, Issue 10, 2000, Pages 500-502

  Shenai, K ^a   McShane, E ^a   Leong, S K ^b  

^a 1120 Science and Engineering Offices   (United States)

^b PolyFET RF Devices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; GAIN CONTROL; LEAKAGE CURRENTS; POWER AMPLIFIERS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

MIXED-SIGNAL CIRCUITY; OSCILLATION FREQUENCIES;

MOSFET DEVICES;

EID: 0034295668     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870614     Document Type: Article

References (9)

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