The design, characterization, and modeling of RF LDMOSFETs on silicon-on-insulator material

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 643-651

  McShane, E ^b   Shenai, Krishna ^a,b  

^a IEEE   (United States)

^b University of Illinois at Chicago   (United States)

Author keywords

Amplifier; Gain; LDMOSFET; Linearity; Power; RF; Silicon on insulator (SOI)

Indexed keywords

SWITCHING LOSSES;

AMPLIFIERS (ELECTRONIC); CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; GAIN CONTROL; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0036541771     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992874     Document Type: Article

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