Strain and substoichiometry at the Si(100)/SiO2 interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 24, 2003, Pages

  Chowdhuri, A Roy ^a   Jin, Dong Un ^a   Rosado, J ^a   Takoudis, C G ^a  

^a 1120 Science and Engineering Offices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON; SILICON DIOXIDE;

ANALYTIC METHOD; ARTICLE; CHEMICAL STRUCTURE; LONGITUDINAL OPTICAL PHONON; MATHEMATICAL ANALYSIS; OPTICS; PROCESS MONITORING; STOICHIOMETRY; STRUCTURE ANALYSIS; SUBSTOICHIOMETRY; TEMPERATURE MEASUREMENT; THERMAL ANALYSIS; THICKNESS; TRANSVERSE OPTICAL PHONON;

EID: 0042028296     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.245305     Document Type: Article

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