Silicon oxide in Si-Si bonded wafers

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 715-720

  Himcinschi, C ^a   Milekhin, A ^a,b   Friedrich, M ^a   Hiller, K ^a   Wiemer, M ^a   Gessner, T ^a   Schulze, S ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Infrared spectroscopy; Si bonded wafers; Silicon oxide

Indexed keywords

ANNEALING; BONDING; ELLIPSOMETRY; ETCHING; HIGH RESOLUTION ELECTRON MICROSCOPY; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); RELAXATION PROCESSES; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL ETCHING; INFRARED TRANSMISSION SPECTRA; SILICON BONDED WAFERS;

SILICON WAFERS;

EID: 0035873352     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00146-5     Document Type: Article

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