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Electronics Letters
Volumn 39, Issue 4, 2003, Pages 408-409
Enhancement-mode p-HEMT using selective hydrogen treatment
Author keywords

[No Author keywords available]
Indexed keywords

ETCHING; GATES (TRANSISTOR); HETEROJUNCTIONS; HYDROGEN; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE; WSI CIRCUITS;
EID: 0037456324     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030263     Document Type: Article
Times cited : (8)
References (6)
  • 1
    • 0033341408 scopus 로고    scopus 로고
    • E-PHEMT for single supply, no drain switch, and high efficiency cellular telephone power amplifiers
    • Monterey, CA, USA
    • TKACHENKO, Y., KLIMASHOV, A., WEI, C., ZHAO, Y., and BARTLE, D.: 'E-PHEMT for single supply, no drain switch, and high efficiency cellular telephone power amplifiers'. GaAs IC Symp. 1999, Monterey, CA, USA, 1999, pp. 127-130
    • (1999) GaAs IC Symp. 1999 , pp. 127-130
    • Tkachenko, Y.1    Klimashov, A.2    Wei, C.3    Zhao, Y.4    Bartle, D.5
  • 2
    • 0032226761 scopus 로고    scopus 로고
    • Depletion and enhancement-mode InP high electron mobility transistors fabricated by a dry gate recess process
    • Beijing, China
    • CHEUNG, R., PATRICK, W., and BAECHTOLD, W.: 'Depletion and enhancement-mode InP high electron mobility transistors fabricated by a dry gate recess process'. Solid-State and Integrated Circuit Technology Conf. 1998, Beijing, China, pp. 598-601
    • Solid-State and Integrated Circuit Technology Conf. 1998 , pp. 598-601
    • Cheung, R.1    Patrick, W.2    Baechtold, W.3
  • 3
    • 0031212433 scopus 로고    scopus 로고
    • Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high electron mobility transistors
    • MAHAJAN, A., CUEVA, G., ARAFA, M., FAY, P., and ADESIDA, I.: 'Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high electron mobility transistors', IEEE Electron Device Lett., 1997, 18, (8), pp. 391-393
    • (1997) IEEE Electron Device Lett. , vol.18 , Issue.8 , pp. 391-393
    • Mahajan, A.1    Cueva, G.2    Arafa, M.3    Fay, P.4    Adesida, I.5
  • 4
    • 0013407516 scopus 로고    scopus 로고
    • Effect of selective hydrogen pretreatment on characteristics of AlGaAs/InGaAs p-HEMTs
    • Chunan, Korea
    • KANG, I.H., KIM, J.H., SONG, H.J., and SONG, J.I.: 'Effect of selective hydrogen pretreatment on characteristics of AlGaAs/InGaAs p-HEMTs'. 9th Korean Conf. on Semiconductors, Chunan, Korea, 2002pp. 265-266
    • (2002) 9th Korean Conf. on Semiconductors , pp. 265-266
    • Kang, I.H.1    Kim, J.H.2    Song, H.J.3    Song, J.I.4

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.