SiGe power HBT's for low-voltage, high-performance RF applications

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 103-105

  Burghartz, Joachim N ^a,b   Plouchart, Jean Olivier ^b   Jenkins, Keith A ^b   Webster, Charles S ^c   Soyuer, Mehmet ^a,b  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

GAIN COMPRESSION; POWER ADDED EFFICIENCY (PAE);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032050343     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663528     Document Type: Article

References (7)

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2. A. Schuppen, S. Gerlach, H. Dietrich, D. Wandrei, U. Seiler, and U. König, "1-W SiGe power HBT's for mobile communications," IEEE Microwave Guided Wave Lett., vol. 6, pp. 341-343, Sept. 1996.
3. IBM's SiGe technology home page at: http://www.chips.ibm.com /sige/technology.html.
4. G. D. Vendelin, Microwave Circuit Design Using Linear and Nonlinear Techniques. New York: Wiley, 1990, ch. 1, p. 9.
5. J. N. Burghartz, D. C. Edelstein, K. A. Jenkins, C. Jahnes, C. Uzoh, E. J. O'Sullivan, K. K. Chan, M. Soyuer, P. Roper, and S. Cordes, "Monolithic spiral inductors fabricated using VLSI Cu-damascene interconnect technology and low-loss substrates," in IEDM Tech. Dig., 1996, pp. 99-102.
6. C. J. Wei, J. C. M. Hwang, W-J. Ho, and J. A. Higgins, "Large-signal modeling of self-heating, collector transit-time, and RF breakdown effects in power HBT's," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2641-2647, Dec. 1996.
7. M. Verleijen, R. Dekker, W. v. d. Einde, and A. Pruijmboom, "Low-voltage high-performance silicon RF power transistors," in IEEE MTT Symp. Dig., 1995, pp. 563-566.