Improved microwave and noise performances of InGaP/In0.33Ga0.67As p-HEMT grown on patterned GaAs substrate

Electronics Letters

Volumn 37, Issue 15, 2001, Pages 981-983

  Kim, J H ^a   Jo, S J ^a   Song, J I ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; FREQUENCY RESPONSE; GAIN MEASUREMENT; MICROWAVE MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSCONDUCTANCE;

DRAIN CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035913106     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010636     Document Type: Article

References (5)

1. Role of misfit dislocations on pseudomorphic high electron mobility transistors
2. 0.67As metamorphic HEMTs on GaAs
3. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
4. Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy
5. Highly strained InGaP/InGaAs p-HEMT using reduced area growth