SiGe HBT self-heating modeling and characterization from AC data

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 92-95

  Shams, Shaikh F ^a   McAndrew, Colin C ^a   Lim, Ik Sung ^a   Zlotnicka, Anna ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DATA STRUCTURES; ELECTRIC CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; THERMOELECTRICITY;

SELF-HEATING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036441768     PISSN: 10889299     EISSN: None     Source Type: Journal    
DOI: 10.1109/BIPOL.2002.1042894     Document Type: Article

References (5)

1. R.S. Vogelsong and C. Brzezinzski, "Simulation of Thermal Effects in Electrical Systems" Proc. IEEE APEC, pp. 353-356, Mar. 1989.
2. C.C. McAndrew, "A Complete and Consistent Electrical/ Thermal HBT Model" Proc. BCTM, pp. 200-203, 1992.
3. R.M. Fox and S.-G. Lee, "Predictive Modeling of Thermal Effects in BJTs," Proc. BCTM, pp. 89-92, 1991.
4. H. Nakayama et al., "Methodology of Self-Heating Free Parameter Extraction and Circuit Simulation for SOI CMOS," Proc. IEEE CICC, pp. 381-384, 2001.
5. J.S. Brodsky et al., "Physics-Based Multiple-Pole Models for BJT Self-Heating," Proc. BCTM, pp. 249-252, 1993.