Direct current and alternating current performance in InGaP/InxGa1-xAs FETs using airbridge gate with multiple piers

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 312-317

  Chen, H R ^b   Wu, M Y ^a   Lour, W S ^a   Hung, G L ^a   Shih, Y M ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSCONDUCTANCE;

AIRBRIDGE GATE; DOPED CHANNEL FIELD-EFFECT TRANSISTORS (DCFET);

FIELD EFFECT TRANSISTORS;

EID: 0032673196     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/004     Document Type: Article

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