Raman spectroscopy investigation of (SiC)1-x(AlN)x layers formed by ion implantation in 6H-SiC

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 729-734

  Zahn, D R T ^a   Werninghaus, T ^a   Thuemer, M ^a   Pezoldt, J ^a   Heera, V ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ION IMPLANTATION; NITROGEN; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

POSITRON ANNIHILATION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0030394993     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)