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Volumn 136-138, Issue , 1998, Pages 505-510

Generation and relief of mechanical stresses in ion irradiated SiC and SiO2

Author keywords

Ion irradiation; Mechanical stresses; SiC; SiO2; Volume swelling

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ION BEAMS; ION BOMBARDMENT; NUCLEATION; QUARTZ; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; STRESS ANALYSIS; STRESS RELAXATION; SWELLING;

EID: 0032020294     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00688-5     Document Type: Article
Times cited : (15)

References (21)
  • 13
    • 0003700966 scopus 로고
    • P. Mazzoldi, G.W. Arnolds (Eds.) Elsevier, Amsterdam, The Netherlands
    • G. Götz, in: P. Mazzoldi, G.W. Arnolds (Eds.), Ion Beam Modification of Insulators, Elsevier, Amsterdam, The Netherlands, 1987.
    • (1987) Ion Beam Modification of Insulators
    • Götz, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.