A spatially single-mode laser for a range of 1.25-1.28 μm on the basis of InAs quantum dots on a GaAs substrate

Semiconductors

Volumn 34, Issue 1, 2000, Pages 119-121

  Mikhrin, S S ^a   Zhukov, A E ^a   Kovsh, A R ^a   Maleev, N A ^a   Ustinov, V M ^a   Shernyakov, Yu M ^a   Kayander, I N ^a   Kondrat'eva, E Yu ^a   Livshits, D A ^a   Tarasov, I S ^a   Maksimov, M V ^a   Tsatsul'nikov, A F ^a   Ledentsov, N N ^a   Kop'ev, P S ^a   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033630193     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187954     Document Type: Article

References (9)

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