Identification of desorption products from the thermal reaction of AlN with XeF2 vapor using molecular beam mass spectrometry and a time-of-flight technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 A, 2003, Pages

  Watanabe, Morimichi ^a   Iida, Takashi ^b   Akiyama, Keijiro ^b   Narita, Shogo ^b   Ishikawa, Takahiro ^a   Sakai, Hiroaki ^a   Sawabe, Kyoichi ^b   Shobatake, Kosuke ^b  

^a NGK INSULATORS LTD   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Aluminum fluoride; Aluminum nitride; Etching reaction; Quadrupole mass spectrometer; Time of flight distribution; Xenon difluoride

Indexed keywords

ETCHING; FLUORINE COMPOUNDS; MASS SPECTROMETRY; MOLECULAR BEAMS; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS;

ALUMINUM FLUORIDE; QUADRUPOLE MASS SPECTROMETER; THERMAL ETCHING; TIME-OF-FLIGHT DISTRIBUTION; XENON DIFLUORIDE;

ALUMINUM NITRIDE;

EID: 0038721278     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l356     Document Type: Letter

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