Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 81, Issue 2, 2002, Pages 292-294

  Egawa, T ^a   Ohmura, H ^a   Ishikawa, H ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; HIGH QUALITY; LED STRUCTURE; LOW-TEMPERATURE-GROWN GAN; OPTICAL CHARACTERISTICS; SAPPHIRE SUBSTRATES; THREADING DISLOCATION DENSITIES;

ELECTRIC PROPERTIES; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 79956012940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492857     Document Type: Article

References (8)

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