메뉴 건너뛰기




Volumn 38, Issue 20, 2002, Pages 1183-1184

Towards high performance GaInAsN/GaAsN laser diodes in 1.5 μm range

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EMISSION SPECTROSCOPY; LASER PULSES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0037179903     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020812     Document Type: Article
Times cited : (38)

References (7)
  • 1
    • 0030079777 scopus 로고    scopus 로고
    • GaInNAs: A novel material for long-wavelength range laser diodes with excellent high-temperature performance
    • KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: a novel material for long-wavelength range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1273-1275
    • Kondow, M.1    Uomi, K.2    Niwa, A.3    Kitatani, T.4    Watahiki, S.5    Yazawa, Y.6
  • 2
    • 0033312505 scopus 로고    scopus 로고
    • 1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
    • BORCHERT, B., EGOROV, A.Y., ILLEK, S., KOMAINDA, M., and RIECHERT, H.: '1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance', Electron. Lett., 1999, 35, pp. 2204-2206
    • (1999) Electron. Lett. , vol.35 , pp. 2204-2206
    • Borchert, B.1    Egorov, A.Y.2    Illek, S.3    Komainda, M.4    Riechert, H.5
  • 3
    • 0036478736 scopus 로고    scopus 로고
    • 1.3 μm GaInAsN laserdiodes with improved high temperature performance
    • FISCHER, M., GOLLUB, D., and FORCHEL, A.: '1.3 μm GaInAsN laserdiodes with improved high temperature performance', Jpn. J. Appl. Phys., 2002, 41, (1, No.2B), pp. 1161-1163
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.1-2 B , pp. 1161-1163
    • Fischer, M.1    Gollub, D.2    Forchel, A.3
  • 5
    • 0035132379 scopus 로고    scopus 로고
    • Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature
    • STEINLE, G., RIECHERT, H., and EGOROV, A.Y.: 'Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature', Electron. Lett., 2001, 37, pp. 93-95
    • (2001) Electron. Lett. , vol.37 , pp. 93-95
    • Steinle, G.1    Riechert, H.2    Egorov, A.Y.3
  • 6
    • 0033691854 scopus 로고    scopus 로고
    • GaInAsN/GaAs laser diodes at 1.52 μm
    • FISCHER, M., REINHARDT, M., and FORCHEL, A.: 'GaInAsN/GaAs laser diodes at 1.52 μm', Electron. Lett., 2000, 36, pp. 1208-1209
    • (2000) Electron. Lett. , vol.36 , pp. 1208-1209
    • Fischer, M.1    Reinhardt, M.2    Forchel, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.