High temperature characteristics of strained InGaAs/InGaAlAs quantum well lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3528-3530

  Park, Seoung Hwan ^a  

^a Catholic University of Daegu   (South Korea)

Author keywords

Characteristic temperature; InGaAs InGaAlAs; InGaAs InGaAsP; Optical gain; Threshold current density

Indexed keywords

BAND MIXING EFFECT; OPTICAL GAIN; THRESHOLD CURRENT DENSITY;

CARRIER CONCENTRATION; CURRENT DENSITY; OPTICAL PROPERTIES; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; THERMAL EFFECTS;

QUANTUM WELL LASERS;

EID: 0031163084     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3528     Document Type: Article

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