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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 400-403

High-power UV-light-emitting diode on sapphire

(7) Iwaya, Motoaki a Takanami, Shun a Miyazaki, Atsushi a Watanabe, Yasuhiro a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

AlGaN; Dislocation density; Light extraction efficiency; LT AlN interlayer; UV LED

Indexed keywords

PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

DIRECT CURRENT INJECTION; FULL WIDTH AT HALF MAXIMUM; LIGHT EXTRACTION EFFICIENCY; LOW DISLOCATION DENSITY;

LIGHT EMITTING DIODES;

EID: 0038682132 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.400 Document Type: Article

Times cited : (36)

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