Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1289-1295

  Olsen, S H ^a   O'Neill, A G ^a   Norris, D J ^b   Cullis, A G ^b   Fobelets, K ^c   Kemhadjian, H A ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

AFM; Cross hatching; MOSFETs; Oxide interface roughness; Strained Si SiGe; TEM; Transconductance

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; SEMICONDUCTING SILICON; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

OXIDE INTERFACE ROUGHNESS;

MOSFET DEVICES;

EID: 0038612793     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00060-1     Document Type: Article

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