Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4268-4270

  Peng, L H ^a   Shih, C W ^a   Lai, C M ^a   Chuo, C C ^b   Chyi, J I ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; FERMI LEVEL; OPTICAL PROPERTIES; POISSON EQUATION; QUENCHING; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA;

WAVELENGTH EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038450154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1583869     Document Type: Article

References (27)

1. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys. 38, 3976 (1999).
2. S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).
3. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Matsushita, and T. Mukai, Appl. Phys. Lett. 76, 22 (2000).
4. S. Nakamura, Science 281, 956 (1998).
5. F. Ponce and D. Bour, Nature (London) 386, 351 (1997).
6. Y. Narukawa, Y. Kawakami, S. Fujita, and S. Nakammura, Phys. Rev. B 59, 12083 (1999).
7. I.-H. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
8. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 63, 193201 (2001).
9. P. Waltereit, O. Brandt, J. Ringling, and K. H. Ploog, Phys. Rev. B 64, 245305 (2001).
10. M. S. Minsky, S. Watanabe, and N. Yamada, J. Appl. Phys. 91, 5176 (2002).
11. G. Traetta, R. Cingolani, A. D. Carlo, F. D. Sala, and P. Lugli, Appl. Phys. Lett. 76, 1042 (2000).
12. S. P. Lepkowski, T. Suski, P. Perlin, V. Yu. Ivanov, M. Godlewski, N. Grandjean, and J. Massies, J. Appl. Phys. 91, 9622 (2002).
13. J. L. Sánchez-Rojas, J. A. Garrido, and E. Muñoz, Phys. Rev. B 61, 2773 (2000).
14. O. Mayrock, H.-J. Wünsche, and F. Henneberger, Phys. Rev. B 62, 16870 (2000).
15. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
16. C.-C. Chuo, C.-M. Lee, and J.-I. Chyi, Appl. Phys. Lett. 78, 314 (2001).
17. S.-H. Park and S.-L. Chuang, Appl. Phys. Lett. 76, 1981 (2000).
18. S. Bidnyk, T. J. Schmidt, B. D. Little, and J. J. Song, Appl. Phys. Lett. 74, 1 (1999).
19. E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 80, 977 (2002).
20. P. G. Eliseev, P. Perlin, J. Lee, and M. Osinski, Appl. Phys. Lett. 71, 569 (1997).
21. L.-H. Peng, C.-W. Chuang, and L.-H. Lou, Appl. Phys. Lett. 74, 795 (1999).
22. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, l (1999).
23. B. Jogai, J. Appl. Phys. 91, 3721 (2002).
24. A. Dmitriev and A. Oruzheinikov, J. Appl. Phys. 86, 3241 (1999).
25. L.-H. Peng, Y.-C. Hsu, and C.-W. Chuang, IEEE J. Sci. Top. Quantum Electron. 5, 756 (1999).
26. V. Fiorentini, F. Bernardini, F. D. Sala, A. D. Carlo, and P. Lugli, Phys. Rev. B 60, 8849 (1999).
27. S. Chichibu, T. Azuhata, T. Soda, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).