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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages 2453051-2453056

Electrostatic fields and compositional fluctuations in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy

(4) Waltereit, Patrick a Brandt, Oliver a Ringling, Jens a Ploog, Klaus H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; INDIUM; NITROGEN;

ARTICLE; CHEMICAL COMPOSITION; COMBINATORIAL CHEMISTRY; DECOMPOSITION; ELECTRICITY; ENERGY; LUMINESCENCE; MOLECULAR DYNAMICS; QUANTUM MECHANICS; RADIATION; TEMPERATURE DEPENDENCE;

EID: 0035894359 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.245305 Document Type: Article

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.